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008			211022b |||||||| |||| 00| 0 eng d
040			_aMSU _cMSU _erda
100			_aGrechnikov, A.A. _eauthor
245			_aGas-phase basicity: Parameter determining the efficiency of laser desorption/ionization from silicon surfaces _cA.A Grechnikov, A.S. Borodkov, .S.S Alimpiev, S.M Nikiforov and Ya O. Simanovsky
264			_aMoscow _bPleiades Publishing _c2013
336			_2rdacontent _atext _btxt
337			_2rdamedia _aunmediated _bn
338			_2rdacarrier _avolume _bnc
440			_aJournal of Analytical Chemistry _vVolume 68, number 1,
520			_aThe efficiency of laser desorption/ionization of twenty compounds from the surface of amorphous silicon is studied as a function of proton affinity (PA) and gas-phase basicity (GB). The values of GB and PA are obtained from quantum-chemical calculations using the density functional theory in the B3LYP model with the 6–311++G(3df,3pd) basis set. The values of GB lie in the range from 845 to 977 kJ/mol. The efficiency of laser desorption/ionization exponentially depends on the GB and PA values and for the studied compounds varies from 7 × 10−6 to 1.4 × 10−2.
650			_aAnalytical chemistry
700	1		_aBorodkov, A.S. _eauthor
700	1		_aAlimpiev, S.S _eauthor
700	1		_aNikiforov, S.M. _eauthor
700	1		_aSimanovsky, Ya O. _eauthor
856			_uhttp://www.springer.com/chemistry/analytical+chemistry/journal/10809
942			_2lcc _cJA
999			_c157645 _d157645