Gas-phase basicity: Parameter determining the efficiency of laser desorption/ionization from silicon surfaces A.A Grechnikov, A.S. Borodkov, .S.S Alimpiev, S.M Nikiforov and Ya O. Simanovsky
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Item type | Current library | Call number | Vol info | Copy number | Status | Notes | Date due | Barcode | |
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Main Library - Special Collections | QD71.25 JOU (Browse shelf(Opens below)) | Vol.68, No.1, pages 19-26 | SP20793 | Not for loan | For in-house use only |
The efficiency of laser desorption/ionization of twenty compounds from the surface of amorphous silicon is studied as a function of proton affinity (PA) and gas-phase basicity (GB). The values of GB and PA are obtained from quantum-chemical calculations using the density functional theory in the B3LYP model with the 6–311++G(3df,3pd) basis set. The values of GB lie in the range from 845 to 977 kJ/mol. The efficiency of laser desorption/ionization exponentially depends on the GB and PA values and for the studied compounds varies from 7 × 10−6 to 1.4 × 10−2.
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