Crystal growth of Si ingots for solar cells using cast furnaces Kazuo Nakajima

By:

Nakajima, Kazuo [author]

Material type: Text

TextPublication details: Cambridge Elsevier 2020Description: xxx, 359 pages Col. ill. 20 cmContent type:

Media type:

rdamedia

Carrier type:

rdacarrier

ISBN:

9780128197486

Subject(s):

LOC classification:

TK78711.15.S55

Summary: Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume. Covers the concept of crystal growth, providing an understanding of each growth method Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control Reviews fundamental characterization concepts to discern the quality of ingots and wafers Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress

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Holdings
Item type	Current library	Call number	Copy number	Status	Date due	Barcode
Book	Zvishavane Mining Sciences Library Open Shelf	TK7871.15.S55 NAK (Browse shelf(Opens below))	149889	Available		BK136398

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Previous	TK7867 NOR Analysis and application of analog electronic circuits to biomedical instrumentation	TK7868. D5 FLO Digital fundamentals /	TK7868 FLE Flexible energy conversion and storage devices	TK7871.15.S55 NAK Crystal growth of Si ingots for solar cells using cast furnaces	TK 7872.54 HAR Vacuum and solid state electronics :	TK7878 GUP A course in electrical and electronic measurements & instrumentation: for B.Sc. (Engineering); B.Tech; B.E.; A.M.I.E. (India) Section B; U.P.S.C. I.E.S. (Electrical engineering); U.P.S.C. I.E.S. (Electronics and Telecommunication Engineering); GATE (Electrical engineering) and other equivalent engineering examinations /	TK7878 GUP A course in electrical and electronic measurements & instrumentation: for B.Sc. (Engineering); B.Tech; B.E.; A.M.I.E. (India) Section B; U.P.S.C. I.E.S. (Electrical engineering); U.P.S.C. I.E.S. (Electronics and Telecommunication Engineering); GATE (Electrical engineering) and other equivalent engineering examinations /	Next

Includes references and an index

Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces is the first book written to both comprehensively describe these concepts and technologies and compare the strengths and weaknesses of various techniques. Readers will learn about the basic growth and characterization of Si crystals, including sections on the history of cast methods for Si ingots for solar cells. Methods discussed include the dendrite cast method, as well as other significant technologies, including the high-performance (HP) cast and mono-like cast methods. These concepts, growth mechanisms, growth technologies, and the problems that still need to be solved are all included in this comprehensive volume.

Covers the concept of crystal growth, providing an understanding of each growth method
Discusses the quality of Si ingot, mainly from the viewpoint of crystal defects and their control
Reviews fundamental characterization concepts to discern the quality of ingots and wafers
Discusses concepts and technologies to establish a low-temperature region in a Si melt using the NOC method in order to obtain a uniform and large Si single ingot with low stress

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